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| (R) T40XXXKS STANDARD TRIACS FEATURES IT(RMS) = 40A VDRM = 400V to 800V INSULATING VOLTAGE 2500V(RMS) (UL RECOGNIZED : E81734) G A1 A2 DESCRIPTION The T40XXXKS series triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose switching and phase control applications. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 1 A/s. IG = 500 mA Tc= 75 C tp = 8.3 ms tp = 10 ms I2t dI/dt tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s Value 40 330 300 450 10 50 - 40, + 150 - 40, + 125 260 C C A2s A/s Unit A A RD107 (Plastic) Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125C 400 Voltage M 600 S 700 N 800 Unit V 1/5 T40XXXKS THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-c) Parameter Junction to case for D.C Junction to case for A.C 360 conduction angle (F=50Hz) Value 1.2 0.9 Unit C/W C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) IGM = 4 A (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD=12V (DC) RL=33 Tj= 25C Quadrant I-II-III IV VGT VGD tgt VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IG = 500mA IT = 56A dIG/dt = 3A/s IT= 250 mA Gate open IG= 1.2 IGT Tj= 25C Tj= 125C Tj= 25C I-II-III-IV I-II-III-IV I-II-III-IV MAX MAX MAX MIN TYP Sensitivity 12 50 50 1.5 0.2 2 13 50 75 V V s mA Unit IH * IL Tj= 25C Tj= 25C I-III-IV II MAX TYP TYP MAX MAX MAX MIN MIN 50 50 100 1.7 10 3 500 5 75 75 150 mA mA VTM * IDRM IRRM dV/dt * (dV/dt)c * ITM= 56A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 18 A/ms Tj= 25C Tj= 25C Tj= 125C Tj= 125C Tj= 125C V A mA V/s V/s * For either polarity of electrode A2 voltage with reference to electrode A1 ORDERING INFORMATION T TRIAC MESA GLASS CURRENT 2/5 40 12 SENSITIVITY M KS PACKAGE : KS = RD107 VOLTAGE (R) T40XXXKS Fig.1 : Maximum RMS power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) Tcase (o C) Rth = 0 o C/W 0.5 o C/W o 1 C/W 1.5 o C/W P(W) 60 180 O 60 = 180 = 120 = 90 o o 50 40 30 20 10 = 30 o 50 40 30 20 10 -75 -85 -95 -105 -115 o = 60 o I T(RMS) (A) 0 0 5 10 15 20 25 30 35 40 Tamb ( C) o 0 0 20 40 60 80 100 120 -125 140 Fig.3 : RMS on-state current versus case temperature. I T(RMS) (A) Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1 50 40 30 = 180 o 0.1 20 10 Tcase( C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1E +0 o tp (s) 1 E+1 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt 300 Tj initial = 25 C o 250 200 150 Ih 100 50 Tj(oC) Number of cycles -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 100 0 3/5 (R) T40XXXKS Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. I TSM (A). I2 t (A 2 s) Fig.8 : On-state characteristics (maximum values). I TM (A) Tj initial = 25oC 1000 I TSM 1000 Tj initial o 25 C I2t 100 Tj max Tj max Vto =1.06 V Rt =0.01 10 tp(ms) VTM (V) 100 1 10 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4/5 (R) T40XXXKS PACKAGE MECHANICAL DATA RD107 (Plastic) G a2 H L REF. A a1 DIMENSIONS Millimeters Inches Typ. Min. Max. Typ. Min. Max. 40.0 29.9 30.3 22.0 27.0 24.0 14.0 3.5 1.95 0.75 4.0 0.45 6.2 4.7 9.5 11.35 1.4 1.6 3.0 0.85 4.5 0.55 6.3 4.8 11.7 0.446 0.551 0.630 1.575 1.177 1.193 0.867 1.063 0.945 0.552 0.138 0.767 0.118 0.029 0.033 0.157 0.177 0.018 0.022 0.244 0.248 0.185 0.189 0.374 0.461 b1 C c2 a1 c1 a2 B b1 C c1 c2 E F J I E K A Marking : type number Weight : 20 g B F G H I J K L Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 (R) |
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